Spacer structure in MRAM cell and method of its fabrication

ABSTRACT

Methods are presented for fabricating an MTJ element having a uniform vertical distance between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not reduced in thickness and serves to maintain uniform vertical distance between the bit line and the MTJ free layer.

This is a Divisional Application of U.S. patent application Ser. No.11/290,763, filed on Nov. 30, 2005, now U.S.Pat. No. 7,880,249 which isherein incorporated by reference in its entirety, and assigned to acommon assignee.

RELATED PATENT APPLICATIONS

This Application is related to Application No. HT 05-003, Ser. No.11/106,320, Filing Date, Apr. 14, 2005, now issued as U.S. Pat. No.7,241,632 and to Application No. HMG 05-012/016, Ser. No. 11/221,146,Filing Date, Sep. 7, 2005, now abandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to a magnetoresistive random accessmemory (MRAM) cell formed in a magnetic tunneling junction (MTJ)configuration and particularly to a method of improving its coupling toan adjacent bit line.

2. Description of the Related Art

The magnetic tunneling junction (MTJ) device is a form of giantmagnetoresistive (GMR) device in which the relative orientation of themagnetic moments of parallel, vertically separated, upper and lowermagnetized layers controls the flow of spin-polarized electronstunneling through a very thin dielectric layer (the tunneling barrierlayer) formed between those layers. When injected electrons pass throughthe upper layer they are spin polarized by interaction with the magneticmoment of that layer. The probability of such an electron then tunnelingthrough the intervening tunneling barrier layer into the lower layerthen depends on the availability of states within the lower electrodethat the tunneling electron can occupy. This number, in turn, depends onthe magnetization direction of the lower electrode. The tunnelingprobability is thereby spin dependent and the magnitude of the current(tunneling probability times number of electrons impinging on thebarrier layer) depends upon the relative orientation of themagnetizations of magnetic layers above and below the barrier layer. TheMTJ device can therefore be viewed as a kind of variable resistor, sincedifferent relative orientations of the magnetic moments will change themagnitude of a current passing through the device.

FIG. 1 is a schematic cross-sectional view of a typical MTJ layerstructure (10) (hereinafter referred to as an MTJ element) formed inwhat is called a spin-filter configuration. In this particular form, thelower one of the two magnetized layers, now called a pinned layer, hasthe direction of its magnetic moment fixed in direction, while themagnetic moment of the upper or free layer remains free to move inresponse to external stimuli. Looking from the bottom up, the layerconfiguration includes a seed layer (5), that is used as a foundation onwhich to form successive overlayers. A layer of antiferromagneticmaterial, the AFM layer (15), is formed on the seed layer and will beused to pin the magnetic moment of the pinned layer by a form ofmagnetic coupling called exchange coupling. The lower, pinned layer (20)is a layer of ferromagnetic material formed on the AFM layer, or it canbe a pair of ferromagnetic layers separated by a non-magnetic couplinglayer. The tunneling barrier layer or junction layer (30) is then formedon the pinned layer, typically by first forming a layer of a metal suchas aluminum (or magnesium) and then subjecting the metal to oxidation.The free layer (40) is a ferromagnetic layer that is then formed on thejunction layer. Finally, a protective capping layer (50) is formed onthe free layer. As will be discussed below, the capping layer, which istypically a layer of Ta, TaN, Ti or TiN, plays an important role whenthe MTJ devices are planarized to render their upper surfaces co-planarwith surrounding insulation.

After the layers are formed, the device is subjected to externalmagnetic fields at various temperatures to produce the magnetic momentsin the pinned and free layers. If the pinned layer is formed as acoupled pair of ferromagnetic layers, the annealing process can be usedto produce antiparallel magnetic moments so that the pinned layer has asubstantially zero total magnetic moment.

If the magnetization of the free layer is allowed to move continuously,as when it is acted on by a continuously varying external magneticfield, the MTJ device can be used as a read-head for sensing magneticfield variations produced by moving magnetically recorded media. If themagnetization of the free layer is constrained to move in only twodirections, eg. parallel to or antiparallel to the magnetization of thepinned layer, then the MTJ device can be used as a memory device, calleda magnetic random access memory device or MRAM. When used as an MRAM,the MTJ device provides only two resistance values, maximum resistancein the antiparallel orientations of the free and pinned layermagnetizations and minimum resistance in their parallel orientation.Thus, when the device is in one of its two resistance states it can besaid to store a logical zero or one. By sensing the resistance state,the device is “read,” and by changing the resistance state, the deviceis written upon. The writing of such a device is accomplished by itsinteraction with the magnetic fields of current carrying lines, calledword lines and bit lines, that are vertically separated and typicallypass above or below the MTJ device in mutually perpendicular directions.

FIG. 2 is a schematic cross-sectional view of two prior art MTJ devicesand their associated word and bit lines. The devices (10) and (11) arenot shown in their layered detail, but it can be assumed they areidentical to the device in FIG. 1. On the bottom surface of each devicethere is an electrode (20) and (21), that is used to sense theresistance state of each device. A bit line (30) contacts the uppersurface of each device and runs from left to right in the plane of thefigure. A layer of insulation (60) surrounds the devices and alsovertically separates the bit line (30) from the word lines, (70) and(71), that pass over the devices and are directed perpendicularly to theplane of the figure. The word lines are also separated from each otherby layers of insulation (63). It is understood by those skilled in theart that these layers of insulation may be deposited prior to theformation of the word and bit lines and then the word and bit lines maybe plated within channels or trenches formed in the insulation. Once theword and bit lines are formed as shown in this figure, the passage ofcurrents through them will produce magnetic fields that change thedirection of the magnetic moment of the free layer within the MTJdevices. While in FIG. 2 word lines are shown above the MTJ elements, insome other configurations word lines are formed beneath the MTJelements. In some configurations bit lines do not touch the uppersurfaces of the MTJ elements and separate top electrodes are used forthe reading operation.

To make dense arrays of MTJ devices and their associated word and bitlines, it is desirable to have a uniformly flat and co-planar topographyin which the upper surfaces of the MTJ devices are exposed for makingelectrical contact and are co-planar with the insulation layers that areformed about them. The co-planarity of these layers is generallyachieved by use of chemical mechanical polishing (CMP) processes.Maintaining co-planarity of the device contact surfaces is of greatimportance because it will ensure that the distance from the bit linesto the free layers of all the devices is uniform, thereby also ensuringthat currents in the bit lines will produce the same write fields at thefree layers of each device. In addition, uniform smoothness of theinsulation layers and their co-planarity with the exposed devicesurfaces will also eliminate leakage problems between the bit lines andthe MTJ device. Unfortunately, prior art methods using CMP do notachieve the uniformity and co-planarity that is so desirable.

Referring now to FIGS. 3 a-3 c, there is shown a sequence of prior artprocessing steps that are typically used to render the upper surfaces ofan array of MTJ devices co-planar with each other and with thesurrounding insulation. For simplicity and attention to detail, thefigures show only the process as applied to a single MTJ device, but thepresence of an array of adjacent devices can be imagined.

Looking first at FIG. 3 a, there is shown a cross-sectional side view ofa patterned MTJ device (10) already formed on a bottom electrode (20).The tunneling barrier layer (30), the free layer (40) and the cappinglayer (50) are indicated for reference. It can be assumed that the MTJdevice has been patterned as shown above to produce a final lateralwidth, W, by applying either an IBE (ion beam etch) or RIE (reactive ionetch) through a mask to remove unwanted side portions and that the maskhas already been stripped away. It is well known in the art that IBE andRIE belong to a class of anisotropic etching processes, meaning thatthey etch preferentially in one direction (the vertical directionherein) rather than in the other direction (the horizontal directionherein). In the following process steps, such etches will be used andreferred to specifically.

Referring now to FIG. 3 b, there is shown the fabrication of FIG. 3 anow including the additional formation of deposited layer of insulation(70), such as a layer of SiO₂, to cover all exposed surfaces of the MTJdevice (10) as well as the upper surfaces of the bottom electrode (20).

Referring finally to FIG. 3 c, there is shown the fabrication of FIG. 3b subsequent to a CMP process to remove insulation (70) from the uppersurface of the device and surrounding regions and form what is intendedto be a substantially smooth co-planar upper surface. As is shownschematically in the figure, however, the typical effects of such a CMPprocess is to remove so much of the insulation on either side of the MTJdevice, that the upper insulation surface (75) is recessed relative tothe exposed capping layer (50), which is also thinned. The degree ofrecession varies from device to device ranging to 400 angstroms andabove. If the surrounding insulation material falls below the level ofthe barrier layer (30), the device will short out electrically due tocurrent leakage between the layers below the barrier layer to theelectrical lines subsequently formed above the device (and not shownhere). Clearly, since the operation of an MTJ device depends on electrontunneling through the barrier layer, any direct leakage from the lateralside surfaces of the device to surrounding current-carrying lines wouldseverely and adversely affect the device performance.

Other approaches have been tried, particularly approaches that involveforming additional capping layers over the patterned MTJ device beforethe final layer of insulation is applied. Although these approaches seemto have the advantage of providing an accurate spacing between the bitline and the free layer, they do not eliminate shorting from the sidesof the MTJ device (see below) and, therefore, do not have the advantagesof the present invention.

A particular prior art approach to the present problem uses siliconnitride (SiNx) layers to furnish additional protection. This approach isbriefly summarized and illustrated very schematically in FIGS. 4 a-4 e.The method begins with the structure of FIG. 3 a, a patterned MTJ device(10) formed on a bottom electrode (20). The MTJ device includes atunneling barrier layer (30), a free layer (40) and a capping layer(50).

Referring next to FIG. 4 a, there is shown, schematically, thefabrication of FIG. 3 a, now including the formation of a thin layer(90) of silicon nitride (SiN_(x)) conformally covering the MTJ device(10) and the upper surfaces of the bottom electrode (20).

Referring next to FIG. 4 b, there is shown, schematically, thefabrication of FIG. 4 a wherein an anisotropic etching process, such asan IBE or RIE, has removed portions of the nitride layer laterallyextending on the bottom electrode (20) beyond the MTJ device, leavingsidewalls (95) on both lateral side surfaces of the MTJ device

Referring now to FIG. 4 c, there is shown, schematically, thefabrication of FIG. 4 b wherein a layer of insulation (70), such as alayer of SiO₂, is now formed conformally covering the upper cappinglayer (50) of the MTJ device, the sidewall (95) SiN_(x) layers on theMTJ device as well as the surrounding lower electrode (20) surfaces. Itis at this point that a CMP process is applied to remove excessinsulation from the top of the MTJ device and the surrounding regions.

Referring now to FIG. 4 d, there is seen a schematic drawing of theresults of a CMP process to produce the desired smooth, planar uppersurface in which the upper surface of the MTJ device is renderedsubstantially co-planar with the upper surface of the surroundinginsulating material (70). As is shown in the figure, the CMP process isstopped by the sidewalls (95) and the MTJ capping layer (50) of Ta, Ti,TaN or TiN. The sidewalls (95) prevent exposure of the sides of the MTJdevice even if the CMP process recesses the surface of the insulationlayer (70) below the upper surface of the MTJ device.

Referring to FIG. 4 e there is shown a subsequent process step that ispreparatory to the formation of a conducting bit line (or otherconducting electrode) over the top of the structure of FIG. 4 d.Typically, the bit line is manufactured using a Cu damascene process inwhich a copper line is formed in a lined trench. To prepare for this, alayer of SiNx (100) is first deposited, followed by a thicker layer ofSiO₂ (110). Trenches are then etched into these two layers and a layerof Cu, surrounded by adhesion/barrier layers (neither being shown) areformed in the trenches. During the etching of the SiNx layer (100) theSiNx sidewall layers (95) are also etched, leading to thedisadvantageous formation shown in FIG. 4 f.

Referring to FIG. 4 f, there is shown the fabrication of FIG. 4 e,wherein an etching of the SiO₂ (110) and SiNx (100) layers has alsocaused an etching and partial removal of the protective sidewall spacers(95) previously formed on the MTJ structure. The removal of the portionsof the sidewall exposes the sides of the MTJ device to possibleshorting, which the sidewall is originally meant to prevent.

Another approach is taught in related patent application HMG 05-012/016and is fully incorporated herein by reference. In that process a SiNxcapping layer is used to stop the CMP process.

Referring to FIG. 5 a there is shown an MTJ device (10) identical tothat in FIG. 3 a. In FIG. 5 b, the MTJ device of FIG. 5 a is shownsubsequent to the formation of a SiNx layer (120) conformally coveringall exposed surfaces of the MTJ device as well as the bottom electrode(20) on which it is formed. Referring next to FIG. 5 c, there is shownthe fabrication of FIG. 5 b subsequent to the formation of a layer ofSiO₂ (125) to conformally cover the layer of SiNx (120).

Referring next to FIG. 5 d, there is shown the fabrication of FIG. 5 csubsequent to the application of a CMP process to remove SiO₂ materialfrom the layer (125) on top of the device and stop at the SiNx layer(120). Because CMP removes SiNx at a slower rate than SiO₂, the SiNxlayer will exhibit little or no recession of its surface (121), althoughthe surrounding surface of the SiO₂ layer (126) may be recessed belowthe surface of the SiNx. Finally, referring to FIG. 5 e, there is shownthe removal of the SiNx layer (120) from the capping layer (50) by anIBE or RIE etching process, leaving the sidewall portion of the SiNxlayer relatively intact. A top electrode can now be deposited directlyon the capping layer of the MTJ device.

It is to be noted that the removal of the SiN_(x) layer by an IBE orRIE, is a much more selective and controllable removal process than theCMP process. The basic idea in the method just described is to removewith great precision all of the SiN_(x) spacer layer from over the Tacapping layer, thereby leaving the capping layer substantially unthinnedfrom its original carefully controlled, as-deposited thickness. Thismethod assures a uniform spacing between the upper bit line and the freelayer, because it is only the capping layer that separates the one fromthe other. Unfortunately, as was seen in FIG. 4 e, when the topelectrode is to be formed by a Cu damascene process, the device iscompletely covered by additional SiNx and SiO₂ layers which must beetched. This etching will partially remove the desirable sidewallsprotecting the MTJ device. Thus, even though the problem of uniformspacing between the bit line and the free layer is largely eliminated,the problem of shorting from the exposed sides of the MTJ device stillremains.

All of the aforedescribed processes have the disadvantageous property ofallowing the sides of the MTJ device to be exposed and, thereby, toallow shorting between MTJ layers and surrounding current carryingelectrodes. The series of figures to be discussed below as FIGS. 6 a-h,7 a-b and 8 a-b will describe preferred embodiments of the presentinvention that will eliminate this shorting problem while stillretaining the uniform spacing between the free layer and the conductingline formed above the cell element.

A search of the published prior art discloses several other patents andpublished applications that all teach an improvement of the interactionof MTJ elements and surrounding current carrying lines. Jones et al.(U.S. Pat. No. 6,555,858) teaches a flux concentrating scheme in whichmagnetic sidewalls are formed on current carrying lines. Kim et al.(U.S. Pat. No. 6,475,857) teaches a scalable device (a device that canbe reduced in size while retaining advantageous coupling properties toword and bit lines). Kim et al. (U.S. Pat. No. 6,806,096), Grynkewich etal. (U.S. Pat. No. 6,881,351), Durlam et al. (U.S. Pat. No. 6,174,737),Grynkewich et al. (US Patent Application 2004/0205958) and Shi (USPatent Application 2004/0191928) all teach improved methods of maskingdielectric and metal layers during the formation of MTJ elements andassociated word and bit lines. None of these prior art references dealdirectly with the problem of shielding the MTJ element itself so thatthe planarization processes required to form uniformly flat topographiescan work effectively and not lead to conditions that enhance the currentleakage from the MTJ element to surrounding current carrying lines.

Accordingly, it is the object of the present invention to devise a novelprocess for rendering the upper surfaces of MTJ devices and surroundinginsulation co-planar, while avoiding the difficulties just discussed inthe creation of electrical short circuits as a result of current leakagebetween the MTJ device and surrounding current carrying lines.

SUMMARY OF THE INVENTION

A first object of this invention is to provide a method of planarizingthe upper surface of a MTJ device and surrounding insulation so that thesurfaces of the device and insulation are rendered smooth and co-planar.

A second object of the present invention is to provide a method ofplanarizing an array of MTJ devices and their surrounding insulation sothat the resulting surface is smooth and co-planar.

A third object of the present invention is to provide a method offorming a smooth and co-planar upper surface for an array of MTJ devicesand their surrounding insulation so that bit lines or other conductingelectrodes formed on such planarized surface are formed at a uniform andwell-controlled distance from the free layers of the MTJ devices.

A fourth object of the present invention is to provide a method offorming such a smooth and co-planar upper surface such that sideportions of said MTJ devices are not exposed and thereby subject to theformation of electrical short circuits due to current leakage to currentcarrying conductors formed adjacent to them.

These objects will be met by two embodiments of a method of forming asmooth, co-planar upper surface for an array of MTJ devices and theirsurrounding insulation that includes the formation of leakage preventingdielectric (eg. SiO₂) spacers to eliminate electrical short circuits andthe formation and use of CMP-stopping SiN_(x) spacers to allow a uniformand well-controlled distance to be maintained between the MTJ devicesand their associated bit lines during planarization processes. A firstmethod, which constitutes a first embodiment of the present invention,forms an MTJ element in which a SiO₂ spacer layer is inserted between anSiNx layer and the MTJ sidewalls. This method is illustrated by FIGS. 6a-6 h.

A first version of a second embodiment, illustrated by FIGS. 7 a-7 gprovides a layer of SiNx that surrounds the MTJ element with anadditional layer of dielectric material used to prevent current leakagefrom the MTJ to surrounding conductors.

A second version of a second embodiment, illustrated in FIGS. 8 a-b,provides an alternative method of forming the required leakagepreventing layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of a prior-art MTJ MRAM device.

FIG. 2 is a schematic representation of a pair of MTJ MRAM devices andtheir associated bit and word lines as they would be fabricated usingprocesses in accord with the prior art.

FIGS. 3 a-c is a sequence of schematic representations showing aprior-art process flow to produce an MTJ MRAM element surrounded byinsulation and having a substantially planar upper surface topography.

FIGS. 4 a-f is a sequence of schematic representations showing aprior-art process flow, different from, but improved over, that in FIGS.3 a-c, to produce an MTJ MRAM element surrounded by insulation andhaving a substantially planar topography.

FIGS. 5 a-e is a schematic representation of the process flow of anotherprior-art method of providing a smooth and co-planar surface for an MTJMRAM element and surrounding insulation.

FIGS. 6 a-h schematically illustrate the process flow of the firstpreferred embodiment of the present invention.

FIGS. 7 a-b schematically illustrate the process flow of the firstversion of the second preferred embodiment of the present invention.

FIGS. 8 a-b schematically illustrate the process flow of the secondversion of the second preferred embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Each preferred embodiment of the present invention provides a method offabricating an MTJ MRAM element or an array of such elements, includingMTJ devices and associated word and bit lines, such that the uppersurfaces of the MTJ elements and their surrounding insulation are smoothand co-planar, so that the spacing between the bit lines formed on saidupper surface and the free layers within each MTJ element of the arrayis well-controlled and uniform and so that there is no leakage betweenthe MTJ elements and associated current carrying conductors. The firstembodiment of the invention involves the formation of SiO₂ sidewallspacers to prevent current leakage and SiN_(x) spacers on the upper MTJelement surface to protect the capping layer from CMP thinning.

First Preferred Embodiment

Referring first to FIG. 6 a, there is shown, for clarity, a single,typical, horizontally layered MTJ element (10) formed on a bottomelectrode (20) and shown (for simplicity) patterned to a common finallateral width, W, of all its layers. It is to be noted that the elementneed not have all its layers patterned to a common width; for example,the free (40) and pinned (25) layers may have different widths. Theelement, which is identical to that shown in FIG. 1, includes atunneling barrier layer (30), such as a layer of oxidized aluminum ormagnesium, a magnetically free layer (40), such as a layer (or layers)of ferromagnetic material formed on the barrier layer and an uppermostcapping layer (50), such as a layer of Ta, TaN, Ti, or TiN, formed onthe free layer. While this MTJ element is found in the prior art, themethod of the present invention, to be described with reference to thefollowing figures, is not limited to an element of this particularcomposition, although it is applied to it advantageously. It is notedthat identical replicas of this MTJ element (10), when properly arrangedspatially, would form an array of such elements suitable for an MRAMarray and that the method of this invention, now to be described withrespect to a single MTJ element, can be used in substantially identicalfashion to fabricate the entire array.

Referring now to FIG. 6 b, there is shown schematically the fabricationof FIG. 6 a wherein a thin first dielectric layer (120) has been formedto conformally cover all exposed surfaces of the MTJ element (10) andthe upper surface of the bottom electrode (20). This layer can be alayer of SiO₂, SiC, AlOx or SiCN, formed to a thickness betweenapproximately 50 and 300 angstroms.

Referring next to FIG. 6 c, there is shown the fabrication of FIG. 6 bsubsequent to a first anisotropic etch, such as an RIE, to remove thoseportions of the layer (120) on the upper surface of the MTJ element andlaterally disposed on the bottom electrode (20) about the MTJ elementand to leave remaining, thereby, only those portions of the originallayer that abut the lateral sides of the MTJ element. These remainingportions of layer (120) now form sidewalls, denoted (125), contactingand abutting the lateral sides of the MTJ element.

Referring next to FIG. 6 d, there is shown the fabrication of FIG. 6 cwith the subsequent additional formation of a second dielectric layer(130) of SiN_(x) or SiONx to a thickness between approximately 50 and300 angstroms, to conformally cover the exposed surfaces of thefabrication. This second layer (130) will serve as the CMP stoppinglayer to assure a uniform distance between the bit line to be formed andthe free layer of the MTJ element.

Referring next to FIG. 6 e, there is shown the fabrication of FIG. 6 dwith the subsequent addition of a blanketing third dielectric layer(140), preferably of SiO₂ formed to a thickness between approximately800 and 3000 angstroms, to conformally cover all exposed surfaces of theCMP stopping layer (130). This layer (140) is then planarized by a CMPprocess and the planarization stops within the upper horizontal portionof the CMP stopping layer (130), leaving a resulting exposedsubstantially planar surface as shown in FIG. 6 f. It is noted that theCMP process will typically reduce the height of the blanketing layer(140) somewhat below the final height of the CMP stopping layer (130).

Referring next to FIG. 6 g, there is shown the CMP planarizedfabrication of FIG. 6 f subsequent to a second anisotropic etchingprocess, such as RIE, that precisely and completely removes the exposedportion of the CMP stopping layer (130). The etch process must beselective with respect to producing little removal of the firstdielectric (eg. SiO₂, SiC, AlOx or SiCN) sidewall layer (125) comparedto the nearly complete removal of the CMP stopping layer (130) that isformed preferably of SiNx or SiONx. On the other hand, the CMP processcan remove portions of the CMP stopping layer, since the selective etchwill carefully remove the remaining portions. As illustratedschematically in FIG. 6 g, the upper surface of the MTJ element, itscapping layer (50), has been exposed, but not thinned, by the etchprocess. Therefore, given the precise and controlled thickness of thecapping layer, the vertical spacing between the MTJ element free layerand a subsequently formed conductor on the upper surface of the MTJelement, will be uniform. As is also seen in FIG. 6 g, the resultingstructure has two kinds of dielectric layers surrounding the MTJelement. The first dielectric layers are the sidewalls (125) formed ofthe first dielectric deposition that now abut the lateral sides of theMTJ element. The second dielectric layer is the remaining portion of theCMP stopping layer (130) that now abuts the first dielectric layers(125). These layers, abutting the lateral sides of the MTJ element willprevent any current leakage from the element to current carryingconductors, such as bit lines, subsequently formed above the element bythe method illustrated in FIG. 6 h described below.

Referring now to FIG. 6 h, the fabrication is then prepared for theformation of a Cu damascened electrode (eg. a bit line) by theadditional formation of a thin layer of SiNx (150) on which is formed athick layer of SiO₂ (160). The SiNx layer is formed to a thicknessbetween approximately 200 and 1000 angstroms and the SiO₂ layer isformed to a thickness between approximately 1000 and 8000 angstroms. Theformation of the Cu damascened conducting line will occur within atrench (190) formed within these layers (150) and (160) by etchingprocesses that remove portions of those layers and stop at the uppersurface of layer (140) and the upper surface (50) of the MTJ cellelement. Note that the trench (190) is shown as already formed.Referring back to FIG. 4 f there is shown the result of a similar trenchformation in the context of the prior art process. In that process, theetching of the trench through the SiNx layer (layer (150) in thisfigure) also removed portions of the SiNx sidewalls surrounding the MTJelement (layer (95) in FIG. 4 e), exposing the element sides to currentleakage. As is seen in FIG. 6 h, however, the etching of the trench whenusing the method of the present invention now may remove portions of the(SiNx or SiONx) CMP stopping layer (130), but it does not remove thesidewalls (125), because they are formed of dielectric material (eg.SiO₂) that has high etch selectivity relative to the stopping layermaterial.

It is to be noted that RIE etches suitable for achieving all the objectsof the present invention in all of its preferred embodiments (above andbelow) are well known in the art. For example, a RIE with afluorine-deficient fluorocarbon plasma without hydrogen, such as aCF₄+C₂F₄, C₂F₆ plasma or the like, has high SiO₂ to SiNx selectivity(i.e. it etches the SiO₂ more rapidly than the SiNx). On the other hand,a RIE with high SiNx to SiO₂ selectivity can be obtained using achlorine based plasma or a fluorine rich plasma, or a bromine chemistryor a fluorine based plasma with oxygen.

Second Preferred Embodiment

The second preferred embodiment includes two versions, one of which is acontinuation of the process steps already described and illustrated withrespect to FIGS. 4 a-4 d of a prior art process and the other of whichis a continuation of the process steps described and illustrated inFIGS. 5 a-5 e of a prior art process. In other words, the prior artprocess steps are carried out to a certain point and then the method ofthe second preferred embodiment replaces the remaining steps of theprior art process so as to achieve the objects of the present invention.The continuation of the process steps in accord with the secondembodiment allows the formation of bit lines over the MTJ elements whilenot disturbing the lateral spacer layers already formed abutting thesides of the MTJ element. It is to be recalled that the prior art methodleads to destruction of the spacer layers as a result of the formationof the Cu damascene bit lines.

Second Preferred Embodiment, First Version

As a first version of the second preferred embodiment, we shall refer tothe prior art process partially described by FIGS. 4 a-4 d. FIG. 4 d isnow presented as the first process step in the first version of thesecond preferred embodiment of the present invention. All the processsteps described and illustrated in FIGS. 4 a-d have been carried out andthe fabrication shown in FIG. 4 d includes the MTJ element with cappinglayer (50), abutting sidewall spacers of SiNx or SiONx (95), formed to athickness between approximately 50 and 300 angstroms, surrounded by adielectric layer (70) formed to substantially the same height as the MTJelement. The upper surface of the dielectric layer (70) has beenrendered substantially co-planar with both the upper edges of thesidewall spacers (95) and the exposed upper surface of the capping layer(50) by, for example, a CMP process.

At this stage, the prior art process is abandoned and the next processstep is a process step of the present invention that is illustrated anddescribed with reference to FIG. 7 a. Referring to FIG. 7 a, there isshown the fabrication of FIG. 4 d wherein the upper surface of the MTJelement and surrounding dielectric layer (70) has now been covered by athin dielectric etch-stop layer (75), such as a layer of SiO₂, SiC,SiCN, AlOx or SiON, deposited to a thickness between approximately 20and 200 angstroms. The fabrication is then prepared for the formation ofa Cu damascened electrode (eg. a bit line) by the additional formationof a thin layer of SiNx (100) on which is formed a thick layer of SiO₂.The SiNx layer is formed to a thickness between approximately 200 and1000 angstroms and the SiO₂ layer is formed to a thickness betweenapproximately 1000 and 8000 angstroms.

Referring next to FIG. 7 b, there is shown schematically the results ofa three step RIE etching process to produce a trench (190) in which toform the Cu damascene electrode. The first step of the RIE etchingprocess is a first etching process characterized by a chemistry having ahigh SiO₂ to SiNx selectivity (as discussed above) resulting in completeremoval of the SiO₂ layer (110) with little removal of the underlyingSiNx layer. The second step of the RIE etching process is a secondetching process that has a high selectivity of SiNx to the material ofetch-stop layer (75) and removes the SiNx layer (100) with littledisturbance to the etch-stop layer (75). The third step of the RIEetching process has a high etch selectivity for the material of theetch-stop layer (75) to the material of the sidewall spacer layer (95),so that the portion of layer (75) exposed at the trench bottom can beremoved (note: layer (75) is shown removed) with little removal of thesidewall layer (95). Thus, the advantage of the etch-stop layer (75) isthat it can be removed from the top of the MTJ element capping layer(50) without damaging the SiNx sidewall spacers (95), which remain toprotect the MTJ element (10) from current leakage. In addition, thecareful removal of the etch-stop layer allows the MTJ capping layer (50)to retain its as-deposited thickness, thereby preserving an exactdistance between the MTJ free layer and the bit line above it.

Second Preferred Embodiment, Second Version

A second version of the second preferred embodiment begins with thefabrication illustrated and described by FIG. 5 e. The prior art processsteps illustrated and described by FIGS. 5 a-5 e have already occurredand the first process step of the present second preferred embodimentbegins with the description of FIG. 8 a.

Referring to FIG. 8 a, there is shown the fabrication of FIG. 5 ewherein the upper surface of the MTJ element (10), the top edge of layer(120), which is a layer of SiNx or SiONx formed to a thickness between50 and 300 angstroms and surrounding dielectric layer (125) has beencovered by a thin dielectric etch-stop layer (75), such as a layer ofSiO₂, SiC, SiON, SiCN or AlOx, deposited to a thickness betweenapproximately 20 and 200 angstroms. The fabrication is then prepared forthe formation of a Cu damascened electrode (eg. a bit line) by theadditional formation of a thin etch-stop layer of SiNx (100) on which isformed a thicker layer of SiO₂ (110). The SiNx etch-stop layer is formedto a thickness between approximately 200 and 1000 angstroms and the SiO₂layer is formed to a thickness between approximately 1000 and 8000angstroms.

Referring next to FIG. 8 b, there is shown schematically the results ofa three step RIE etching process on the fabrication of FIG. 8 a toproduce a trench (190) in which to form the Cu damascene electrode. Thefirst step of the RIE etching process is characterized by a chemistryhaving a high SiO₂ to SiNx selectivity resulting in complete removal ofthe SiO₂ layer (110) with little removal of the underlying SiNx layer(100). The second step of the RIE etching process has a high selectivityfor SiNx to any of the materials of etch-stop layer (75) and removes theSiNx layer (100) with little disturbance to the etch-stop layer (75).The third etching process has a high selectivity for the materials oflayer (75) to SiNx layer (120) (see the description in FIG. 5 e), sothat layer (75) is completely removed from the bottom of the trench withlittle removal of layer (120). As can be seen, the advantage of theetch-stop layer (75) is that it can be removed from the top of the MTJelement without damaging the SiNx layer (120) that abuts the lateralsides of the MTJ element. This portion of the SiNx layer remains toprotect the MTJ element from current leakage.

The positioning of a bit line (30) on a planarized surface, such as thatwithin the trench formed above, is shown in FIG. 2. Furthermore, asnoted in the description of FIG. 8 b above, the sidewall layer ((120) inFIG. 8 b) also ensures the elimination of current leakages between theMTJ element and surrounding conductors. It is also to be noted from thestructure of the two element array of FIG. 2, that a linear arrayincluding a plurality of MTJ elements, all formed and surrounded byplanarized insulation, in the manner described above can be contacted ontheir upper surfaces by a single bit line or multiple bit lines and thebit lines will be at a uniform distance from the free layers in each MTJelement and the elements in the array will be protected from currentleakage.

As is finally understood by a person skilled in the art, the preferredembodiments of the present invention are illustrative of the presentinvention rather than limiting of the present invention. Revisions andmodifications may be made to methods, materials, structures anddimensions employed in forming and providing a MTJ MRAM device and anarray of such devices having a uniform and precisely controlled spacingbetween associated conducting lines and electrodes and MTJ element freelayers and wherein current leakages between said lines and electrodesand said elements are eliminated, while still forming and providing sucha device and array of such devices and their method of formation inaccord with the spirit and scope of the present invention as defined bythe appended claims.

What is claimed is:
 1. A method of forming an MTJ device comprising:providing a substrate; forming a patterned MTJ element on saidsubstrate, said element having a capping layer with a planar, horizontalupper surface, said element having lateral side surfaces and saidelement including a free layer disposed beneath said capping layer andparallel to said upper surface; then forming a currentleakage-eliminating layer abutting said lateral side surfaces.
 2. Themethod of claim 1 wherein said current leakage-eliminating layer isformed by a method comprising: forming a first dielectric layer,conformally covering the horizontal upper surface and lateral sidesurfaces of said patterned MTJ element and also laterally disposed onsaid substrate; removing, by a first anisotropic etch process, saidlaterally disposed portions of said first dielectric layer and portionsof said first dielectric layer covering the horizontal upper surface ofthe MTJ element, the remaining portions of said layer, thereby, formingspacer layers abutting and covering said lateral side surfaces of saidMTJ element; forming a second dielectric layer, that is a CMP stoppinglayer, conformally over said first dielectric layer, a horizontal upperportion of said second dielectric layer covering the upper surface ofsaid MTJ element, a vertical portion covering said spacer layers and aportion being laterally disposed horizontally on the substrate laterallydisposed beyond said MTJ element; then forming a third dielectric layer,that is a blanket layer of insulation conformally over said seconddielectric layer; then planarizing, using a process of CMP, an uppersurface of said third dielectric layer, the CMP process stopping withinsaid second dielectric layer to expose the upper portion of said seconddielectric layer covering the upper surface of said MTJ element andpartially covering upper portions of said spacer layers; then, removingexposed portions of said second dielectric layer, using a secondanisotropic etching process, thereby exposing the upper surface of saidMTJ element and not thinning said capping layer, thereby rendering theupper surface of said MTJ element substantially co-planar with saidthird dielectric layer upper surface while leaving vertical portions ofsaid second dielectric layer and said spacer layers abutting lateralportions of said MTJ element and, thereby, protecting said element fromcurrent leakage.
 3. The method of claim 1 further including theformation of a conducting bit line over said co-planar surface, thespacing between said bit line and said free layer thereby being uniformand there being no current leakage between said bit line and saidlateral MTJ element side surfaces.
 4. The method of claim 1 wherein saidfirst dielectric layer is a layer of SiO₂, SiON, SiC, AlOx or SiCNformed to a thickness between approximately 50 and 300 angstroms.
 5. Themethod of claim 1 wherein said second dielectric layer is a layer ofSiNx or SiONx formed to a thickness of between approximately 50 and 300angstroms.
 6. The method of claim 1 wherein said third dielectric layeris a layer of SiO₂ formed to a thickness between approximately 800 and3000 angstroms.
 7. The method of claim 1 wherein said first anisotropicetch is an ion-beam etch (IBE) or a reactive ion etch (RIE) with achemistry that removes the material of the first dielectric layer. 8.The method of claim 1 wherein said second anisotropic etch removes thematerial of the second dielectric layer while removing little of thefirst dielectric layer.
 9. A method of forming an MTJ device comprising:providing a substrate; forming a patterned MTJ element on saidsubstrate, said element having a capping layer with a planar horizontalupper surface, said element having lateral side surfaces and saidelement including a free layer disposed beneath said capping layer andparallel to said planar horizontal upper surface; then forming aleakage-eliminating spacer layer abutting said lateral side surfaces;then forming a conducting line over said MTJ element.
 10. The method ofclaim 9 wherein said leakage-eliminating spacer layer is formed by amethod comprising: forming a first dielectric layer, that is aleakage-eliminating layer, conformally covering the horizontal uppersurface and lateral side surfaces of said patterned MTJ element and alsolaterally disposed horizontally on said substrate; removing, by a firstanisotropic etch process, said laterally disposed horizontal portions ofsaid first dielectric layer and portions of said first dielectric layercovering the horizontal upper surface of the MTJ element, the remainingportions of said layer, thereby, forming spacer layers abutting andcovering said lateral side surfaces of said MTJ element; forming asecond dielectric layer, that is a blanket layer of insulation,conformally over said upper portion of said MTJ element, said spacerlayers and laterally disposed on said substrate; then planarizing, usinga process of CMP, an upper surface of said second dielectric layer, theCMP process stopping at said spacer layers and exposing, but notreducing in thickness, said capping layer of said MTJ element.
 11. Themethod of claim 9 wherein said conducting line is a Cu damascene bitline and it is formed over said MTJ element by a method comprising:depositing a third dielectric layer, that is an etch-stopping layer,conformally over the upper surface of said MTJ element, exposed portionsof said spacer layers and the upper surface of said second dielectriclayer, then forming a SiNx layer on said third dielectric layer; thenforming a SiO₂ dielectric layer on said SiNx layer; then forming atrench within said SiNx and SiO₂ layers by a process further comprising:etching, using a second selective, anisotropic etching process, a trenchin said SiO₂ layer to expose said SiNx layer; then etching, using athird selective, anisotropic etch process, through said SiNx layer andstopping within said third dielectric layer, thereby preventing damageto said spacer layers; then etching and removing, using a fourth,selective anisotropic etch process, said third dielectric layerexposing, thereby, the upper horizontal planar surface of said cappinglayer of said MTJ element but not reducing said capping layer inthickness; then forming a Cu damascene bit line within said trench. 12.The method of claim 9 wherein said first dielectric layer is a layer ofSiNx or SiONx formed to a thickness between approximately 50 and 300angstroms.
 13. The method of claim 9 wherein said second dielectriclayer is a layer of SiO₂ formed to a thickness between approximately 800and 3000 angstroms.
 14. The method of claim 9 wherein said thirddielectric layer is a layer of SiO₂, SiC, SiON, SiCN or AlOx formed to athickness between approximately 20 to 200 angstroms.
 15. The method ofclaim 10 wherein said first etching process is an RIE etch that removesSiNx or SiONx.
 16. The method of claim 11 wherein said second etchingprocess is an RIE etch having a chemistry that removes the SiO₂ layerpreferentially to the SiNx layer.
 17. The method of claim 11 whereinsaid third etching process is a RIE etch having a chemistry that removesSiNx preferentially to the material of the third dielectric layer. 18.The method of claim 11 wherein said fourth etching process removes thematerial forming the third dielectric layer preferentially to thematerial forming the first dielectric layer.
 19. The method of claim 9wherein said leakage-eliminating spacer layer is formed by a methodcomprising: forming a first dielectric layer, that is aleakage-eliminating layer, conformally covering the horizontal uppersurface and lateral side surfaces of said patterned MTJ element and alsolaterally disposed on said substrate; forming a second dielectric layer,that is a blanket layer of insulation, conformally over said firstdielectric layer; then planarizing, using a process of CMP, an uppersurface of said second dielectric layer, the CMP process stopping at andexposing the portion of said first dielectric layer covering thehorizontal upper surface of said MTJ element; then removing, by ananisotropic first etch process, said exposed portion of the firstdielectric layer, exposing the upper horizontal planar surface of saidcapping layer of said MTJ element but not reducing the thickness of saidcapping layer, whereby the remaining portion of said second dielectriclayer includes said portion that covers the lateral sides of the MTJelement, forming, thereby, a leakage-eliminating spacer layer.
 20. Themethod of claim 19 wherein said conducting line is a Cu damascene bitline and it is formed over said MTJ element by a method comprising:forming a third dielectric etch-stopping layer conformally over theupper horizontal surface of said MTJ element, and the upper planarizedsurface of said second dielectric layer, then forming a SiNx layer onsaid etch-stopping layer; then forming a SiO₂ dielectric layer on saidSiNx layer; then forming a trench within said SiNx and SiO₂ layers by aprocess further comprising: etching, using a second selective,anisotropic etching process, a trench in said SiO₂ layer to expose saidSiNx layer; then etching, using a third selective, anisotropic etchprocess, through said SiNx layer and stopping within said thirddielectric layer, thereby preventing damage to said spacer layers; thenetching and removing, using a fourth, selective anisotropic etchprocess, said third dielectric layer exposing, thereby, the upperhorizontal planar surface of said capping layer of said MTJ element butnot reducing said capping layer in thickness; then forming a Cudamascene bit line within said trench.
 21. The method of claim 19wherein said first dielectric layer is a layer of SiNx or SiONx formedto a thickness between approximately 50 and 300 angstroms.
 22. Themethod of claim 19 wherein said second dielectric layer is a layer ofSiO₂ formed to a thickness between approximately 800 and 3000 angstroms.23. The method of claim 19 wherein said third dielectric layer is alayer of SiO2, SiC, SiON, SiCN or AlOx formed to a thickness betweenapproximately 20 to 200 angstroms.
 24. The method of claim 19 whereinsaid first anisotropic etch process is an RIE etch having a chemistrythat removes SiNx or SiON.
 25. The method of claim 20 wherein saidsecond anisotropic etch process is an RIE etch having a chemistry thatremoves SiO₂ preferentially to SiNx.
 26. The method of claim 20 whereinsaid third etching process is a RIE etch having a chemistry that removesSiNx preferentially to the material forming the third dielectric layer.27. The method of claim 20 wherein said fourth etching process is an RIEetch that removes the material forming the third dielectric layerpreferentially to the material forming the first dielectric layer.